0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features mmbd1701/a,mmbd1703/a mmbd1704/a,mmbd1705/a absolute maximum ratings ta = 25 parameter symbol value unit working lnverse voltage w iv 20 v average rectified current i o 50 ma dc forward current i f 150 ma recurrent peak forward current i f 150 ma peak forward surge current pulse width = 1.0 second i f 250 ma storage temperature range t stg -55to+150 operating junction temperature t j 150 total device dissipation 350 mw derate above 25 2.8 mw/ thermal resistance, junction to ambient r ja 357 /w mmbd1701/a /1703/a-1705/a* * device mounted on glass epoxy 1.6" 1.6" 0.06", mounting pad for collector lead min. 0.93in2. p d product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol conditions min max unit breakdown voltage b v i r =5.0 a 30 v reverse current i r i f =20v 50 na i f =10 a 420 500 mv i f =100 a 520 610 mv i f = 1.0 ma 640 740 mv i f =10 ma 760 880 mv i f =20ma 810 950 mv i f = 50 ma 0.89 1.1 v diode capacitance c d v r =0,f=1.0mhz 1.0 pf reverse recovery time mmbd1701-1705 i f =i r =10ma,i rr =1.0ma,r l =100 700 ps mmbd1701a-1705a i f =i r =10ma,i rr =1.0ma,r l =101 1.0 ns t rr v f forward voltage marking type mmbd1701/a mmbd1703/a mmbd1704/a mmbd1705/a marking 85/85a 87/87a 88/88a 89/89a mmbd1701/a,mmbd1703/a mmbd1704/a,mmbd1705/a product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
|
